THE SMART TRICK OF GERMANIUM THAT NO ONE IS DISCUSSING

≤ 0.15) is epitaxially developed on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled as a result of oxidizing and annealing levels. Due to the preferential oxidation of Si more than Ge [68], the original Si1–The existence of germanium was predicted by Russian chemist Dmitri Mendeleev in